Sang-Pil Sim received the B.S. degree in Electrical Engineering from Seoul National University (SNU) in 1988 and M.S. degree from Korea Advanced Institute of Science and Technology (KAIST) in 1990. In 1990, he joined SAMSUNG Electronics where he has been involved in 256M-bit DRAM development until he came back to academe in 1999 for Ph. D degree from KAIST. He is currently visiting Santa Clara University (SCU). His research interests include DSM device physics, RF CMOS modeling, and high speed interconnect characterization and modeling.